Aixtron G4-HT for GaN
Mocvd

Aixtron G4-HT for GaN

5.00 out of 5

Aixtron Aix 2800G4 HT MOCVD设备以多区精准温控、高温稳定生长和快速换型三大技术突破，将8英寸GaN外延均匀性偏差压至≤2%、SiC裂纹率降至0.5%，器件良率提升14-18%，双晶圆并行生长使产能翻倍，成为5G基站、新能源汽车和深紫外LED量产的核心引擎。

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1 review for Aixtron G4-HT for GaN

  1. 5 out of 5

    admin –

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